The dynamical conductivity of a Na+-doped interfacial charge layer on silicon
- 31 March 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (11) , 1085-1088
- https://doi.org/10.1016/0038-1098(84)90429-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- The metal insulator transition in two-dimensional systems with charged impuritiesSolid State Communications, 1983
- Influence of charged impurities on Si inversion-layer electronsPhysical Review B, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Frequency-dependent conductivity of a strongly disordered two-dimensional electron gasPhysical Review B, 1982
- A spectroscopic study of Na+ -bound electrons at Si-SiO2 interfacesSurface Science, 1982
- Impurity bands in inversion layersPhilosophical Magazine Part B, 1980
- An elementary approach towards the Anderson transitionSolid State Communications, 1978
- Electronic states of impurities located at or near semiconductor–insulator interfacesJournal of Vacuum Science and Technology, 1978
- Electron scattering in silicon inversion layers by oxide and surface roughnessSurface Science, 1976
- Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized RegimesPhysical Review Letters, 1975