Aligned and twinned orientations in epitaxial CoSi2 layers

9 July 1990

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (2) , 135-137
https://doi.org/10.1063/1.104212

Abstract

Heteroepitaxial CoSi₂ layers have been made by ion beam synthesis and solid phase epitaxy in Si〈111〉 substrates. Using the x‐ray rocking curves of the asymmetric (331) reflections we are able to determine very accurately the relative amount of aligned (type A) and twinned (type B) CoSi₂ in samples with different thicknesses. It is shown that for epilayers thinner than 360 Å, the relative amount of type A CoSi₂ decreases from 100% to 30%.

Keywords

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