Nucleation and growth mechanisms during MBE of III–V compounds
- 8 December 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 67 (1-2) , 7-16
- https://doi.org/10.1016/s0921-5107(99)00203-2
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Island Nucleation and Growth on Reconstructed GaAs(001) SurfacesPhysical Review Letters, 1998
- Nucleation and Growth of Islands on GaAs SurfacesPhysical Review Letters, 1997
- Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisitedSurface Science, 1997
- Submonolayer epitaxy without a critical nucleusSurface Science, 1995
- Mechanisms of layer growth during molecular beam epitaxy of semiconductor filmsMaterials Science and Engineering: B, 1995
- Nucleation and growth in metal-on-metal homoepitaxy: Rate equations, simulations and experimentsJournal of Vacuum Science & Technology A, 1994
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxyPhysical Review B, 1994
- Misorientation dependence of epitaxial growth on vicinal GaAs(001)Physical Review B, 1992
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975