Infrared absorption study of neutron-transmutation-doped germanium

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Abstract
Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements we have studied the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process. Our results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated 70 Ge atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 °C. We show that this is due to donor-radiation-defect complex formation. Again recoil does not play a significant role.