High resolution X-ray diffraction studies of semiconductor superlattices
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 335-343
- https://doi.org/10.1016/0022-0248(90)90208-3
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- Precision X-Ray Techniques for SemiconductorsAnnual Review of Materials Science, 1988
- Sensitivity of X-ray diffractometry for strain depth profiling in III–V heterostructuresJournal of Applied Crystallography, 1987
- X-ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga1−x
Al
x
As alloysJournal of Applied Crystallography, 1987
- Dynamical x-ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix methodJournal of Applied Physics, 1986
- Characterization of Sub-Surface Structures by Double Crystal X-Ray DiffractionMRS Proceedings, 1986
- Simulation of X-ray double-crystal rocking curves at multiple and inhomogeneous heteroepitaxial layersJournal of Applied Crystallography, 1985
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Notizen: Röntgenographische Abbildung des Verzerrungsfeldes einzelner Versetzungen in Germanium-EinkristallenZeitschrift für Naturforschung A, 1958