Interrelation of Si Internal Stress and Si/SiO2 Interface Stress
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A) , L743-745
- https://doi.org/10.1143/jjap.23.l743
Abstract
Both Si/SiO2 interface stress (σint) and Si internal stress (σsi) of identical CZ-Si wafers with oxidized SiO2 film are estimated and analyzed. In the oxidation temperature from 1000 to 1100°C, temperature dependence of σint and σsi is similar in the small warpage region, but quite different in the large warpage region. Furthermore, it is observed that the values of σint are one order of magnitude larger than those of σsi. These experiments suggest that the relaxation phenomenon occurs near Si/SiO2 interface, and the relaxation mechanism in the small warpage region differs from that in the large warpage region.Keywords
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