Picosecond laser pulse irradiation of crystalline silicon
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 729-731
- https://doi.org/10.1063/1.93207
Abstract
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.Keywords
This publication has 9 references indexed in Scilit:
- Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulsesApplied Physics Letters, 1981
- Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equalPhysical Review B, 1981
- Lack of importance of ambient gases on picosecond laser-induced phase transitions of siliconApplied Physics Letters, 1981
- Dynamics of dense laser-induced plasmasPhysical Review B, 1980
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- A new preparation method for large area electron-transparent silicon samplesJournal of Physics E: Scientific Instruments, 1975
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955