Contact Resistivity and Adhesion of Ni/AuGe/Ag/Au Ohmic Contact Directly to n-Type AlGaAs
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6R) , 3051
- https://doi.org/10.1143/jjap.34.3051
Abstract
The direct ohmic contact to AlGaAs, Ni/AuGe/Ag/Au=5/120/100/580 nm has been studied. Contact resistivity of 3.8×10-5 Ω cm2 is obtained after thermal treatment for 10 min at 450° C. This is one order lower than that of the conventional Ni-Ge-Au system. The new metallization also indicates strong adhesion on SiN x film, does not peel off even after thermal treatment during all device processes and withstands the wire bonding process. We conclude that the metallization is useful and applicable for AlGaAs-related devices.Keywords
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