Stimulated emission on Nx(’’A-line’’) recombination transitions in nitrogen-implanted GaAs1−xPx(x≈0.37)
- 15 June 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (12) , 711-713
- https://doi.org/10.1063/1.88646
Abstract
Stimulated emission (4.2 °K) on the NX band recombination transition (formerly identified as NN-pair band) in N-implanted GaAs1−xPx(x≈0.37) is reported. The N is implanted (300 °K) at 200 keV to a peak concentration nN∼5×1018 cm−3 (depth 3600 Å), and to remove damage the crystal is later annealed at 950 °C for 0.5 h. The laser operation observed is the first involving an implanted isoelectronic trap, and occurs on the NX band at higher alloy composition than for any previous case.Keywords
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