Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2449
- https://doi.org/10.1143/jjap.29.l2449
Abstract
Very smooth InGaAsP/InP surfaces and sidewalls were obtained by using the enhanced sputtering effect of Ar addition to Cl2 etching gas in RIBE. The substrate temperature was raised to 180°C in order to remove involatile chlorides and impurities. Moreover, a vertical sidewall with no lateral etching under the mask was realized at the same time. This enables submicron dry etching for heterostructure devices.Keywords
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