Operation of ITO/Si heterojunction solar cells
- 15 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (10) , 682-684
- https://doi.org/10.1063/1.88901
Abstract
We have fabricated solar cells consisting of transparent conducting films of indium‐tin oxide (ITO) rf sputtered onto wafers of single‐crystalline Si. A model quantitatively explaining the experimental data for this MOS‐type solar cell is presented.Keywords
This publication has 4 references indexed in Scilit:
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- Properties of Sn‐Doped In2 O 3 Films Prepared by RF SputteringJournal of the Electrochemical Society, 1975
- Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y]Journal of the Electrochemical Society, 1972
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971