ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOS STRUCTURES
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Valence alternation pair model of charge storage in MNOS memory devicesJournal of Applied Physics, 1979
- Analyses for stoichiometry and for Hydrogen and Oxygen in silicon nitride filmsIEEE Transactions on Electron Devices, 1978
- Energy and spatial distribution of an electron trapping center in the MOS insulatorJournal of Applied Physics, 1977
- Electron and hole transport in CVD Si3N4 filmsApplied Physics Letters, 1975
- Electron trapping levels in silicon dioxide thermally grown on siliconJournal of Physics and Chemistry of Solids, 1972
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965