Scattering theory of the short channel MOSFET
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 387-390
- https://doi.org/10.1109/iedm.1996.553609
Abstract
A simple, physical approach for modeling ultrasubmicron MOSFETs is introduced. The approach, based on scattering probabilities, produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFETs as well. The new model is related to conventional models, and issues such as the role of inversion layer mobility, velocity overshoot, and identifying the maximum saturated drain current, are addressed. Author(s) Lundstrom, M. Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USAKeywords
This publication has 12 references indexed in Scilit:
- Spatial retardation of carrier heating in scaled 0.1-μm n-MOSFET's using Monte Carlo simulationsIEEE Transactions on Electron Devices, 1996
- A flux-based study of carrier transport in thin-base diodes and transistorsIEEE Transactions on Electron Devices, 1995
- Diffusion in a short baseSolid-State Electronics, 1994
- A compact HBT device model based on a one-flux treatment of carrier transportSolid-State Electronics, 1994
- Silicon MOS transconductance scaling into the overshoot regimeIEEE Electron Device Letters, 1993
- Formulation of the Boltzmann equation in terms of scattering matricesSolid-State Electronics, 1993
- Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETsIEEE Transactions on Electron Devices, 1993
- Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET'sIEEE Transactions on Electron Devices, 1985
- MINIMOS—A two-dimensional MOS transistor analyzerIEEE Transactions on Electron Devices, 1980
- Chapter 4 Monte Carlo Calculation of Electron Transport in SolidsPublished by Elsevier ,1979