Crystallographic Character of ZnO Thin Film Formed at Low Sputtering Gas Pressure
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2R)
- https://doi.org/10.1143/jjap.21.264
Abstract
The crystallographic character of ZnO thin films formed by the rf sputtering technique were investigated using X-ray diffraction and RHEED. When the sputtering gas pressure is 5×10-3 Torr, there is no preferred orientation of the crystal axis near the surface of ZnO thin film, but below its surface, the c-axis is oriented normal to the substrate within a certain distribution angle. The crystallites reorient so that the c-axes are normal to the substrate as new surface layers are formed.Keywords
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