Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes
- 26 November 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (22) , 3696-3698
- https://doi.org/10.1063/1.1419236
Abstract
A type of carbon nanotubetransistors, which would be suitable for large-scale integration, has been fabricated from vertically aligned carbon nanotubes. We fabricated highly ordered carbon nanotubes, which are selectively grown on the patternedaluminum oxide nanotemplates. Each device element is formed on a vertical carbon nanotube attached to a bottom (source) and upper (drain) electrodes and a gate electrode, which is electrostatically switchable. The transistors can be integrated in large arrays with the potential for tera-level density (2×10 11 / cm 2 ). The vertical carbon nanotubetransistor shows ON/OFF switching operation at 30 K.Keywords
This publication has 14 references indexed in Scilit:
- Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical BreakdownScience, 2001
- Electrochemical carbon nanotube field-effect transistorApplied Physics Letters, 2001
- Electronic Transport in Y-Junction Carbon NanotubesPhysical Review Letters, 2000
- Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing methodJournal of Physics D: Applied Physics, 2000
- Electronic properties of amorphous carbon nanotubesPhysical Review B, 2000
- Fermi-Level Alignment at Metal-Carbon Nanotube Interfaces: Application to Scanning Tunneling SpectroscopyPhysical Review Letters, 1999
- Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubesApplied Physics Letters, 1999
- Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulationApplied Physics Letters, 1999
- Highly-ordered carbon nanotube arrays for electronics applicationsApplied Physics Letters, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998