Electrical passivation in hydrogen plasma exposedGaN
- 17 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (6) , 527-528
- https://doi.org/10.1049/el:19940327
Abstract
Lightly p-doped (3 × 1017 cm-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides.This publication has 6 references indexed in Scilit:
- p-type zinc-blende GaN on GaAs substratesApplied Physics Letters, 1993
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Hydrogen in Crystalline SemiconductorsPublished by Springer Nature ,1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxyApplied Physics Letters, 1988