Optical properties of the band-edge exciton in GaSe crystals at 10 K
- 15 December 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (12) , 6162-6170
- https://doi.org/10.1103/physrevb.22.6162
Abstract
Optical constants (absorption coefficient and refractive index) of unstrained GaSe samples at low temperature have been measured in the vicinity of the band-edge and exciton series. A quantitative fit with Elliott's model is given for the position and intensity of the levels. This does not necessitate any variation of the apparent oscillator strength with thickness (or temperature). Parameters of the tridimensional hydrogenic series obtained from this fit give values of the band gap, the exciton binding energy, the damping of the excited levels, the oscillator strength of the transition, and the reduced effective masses of the exciton.Keywords
This publication has 21 references indexed in Scilit:
- Exciton Absorption Spectrum of GaSe: A Comment on "Polariton Effects in the Exciton Absorption of GaSe"Physical Review Letters, 1977
- Influence of stacking disorder on Wannier excitons in layered semiconductorsJournal of Physics C: Solid State Physics, 1977
- Optical Constants of GaSe at the Fundamental Absorption EdgePhysica Status Solidi (b), 1977
- Optical constants ofε-GaSeIl Nuovo Cimento B (1971-1996), 1977
- Binding energies and wave functions of wannier excitons in uniaxial crystals — a modified perturbation approach. I. theoryPhysica Status Solidi (b), 1975
- The electronic structure of GaSeIl Nuovo Cimento B (1971-1996), 1973
- Excitonic effect at the direct absorption edges of GaSeSolid State Communications, 1972
- New Analysis of Direct Exciton Transitions: Application to GaPPhysical Review Letters, 1971
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957