Lifetimes of positrons trapped at Si vacancies
- 15 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (12) , 7810-7814
- https://doi.org/10.1103/physrevb.53.7810
Abstract
We present first-principles calculations on positron lifetimes at various vacancies in Si. Lattice relaxation and electron redistribution caused by the vacancy and by the positron are included using the two-component density-functional theory. The calculated lifetimes are in agreement with the experimental data for the monovacancies and the divacancies and provide a new assignment of the longer lifetimes measured previously to stable multivacancies. © 1996 The American Physical Society.Keywords
This publication has 28 references indexed in Scilit:
- Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in SiJapanese Journal of Applied Physics, 1995
- Covalency, elasticity and electron correlation in Si vacanciesApplied Surface Science, 1995
- Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime MeasurementMaterials Science Forum, 1994
- Theory of positrons in solids and on solid surfacesReviews of Modern Physics, 1994
- Temperature characteristics of positron trapping at defects in electron-irradiated siliconApplied Physics A, 1989
- Magic numbers for vacancy aggregation in crystalline SiPhysical Review B, 1988
- Annihilation of Positrons in Electron‐Irradiated Silicon CrystalsPhysica Status Solidi (b), 1978
- Influence of defects and temperature on the annihilation of positrons in neutron-irradiated siliconPhysical Review B, 1976
- EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under-uniaxial stressPhysical Review B, 1974
- EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ()Physical Review B, 1973