Post-irradiation effects in CMOS integrated circuits (SRAMs)
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1662-1666
- https://doi.org/10.1109/23.25517
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- JFET/SOS devices. II. Gamma-radiation-induced effectsIEEE Transactions on Electron Devices, 1988
- Radiation hard 1.0μm CMOS technologyIEEE Transactions on Nuclear Science, 1987
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Total Dose Hardness Assurance for Microcircuits for Space EnvironmentIEEE Transactions on Nuclear Science, 1986
- Dose Rate Effects on Total Dose DamageIEEE Transactions on Nuclear Science, 1986
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- CMOS Hardness Prediction for Low-Dose-Rate EnvironmentsIEEE Transactions on Nuclear Science, 1977
- Hole mobility and transport in thin SiO2 filmsApplied Physics Letters, 1975