JFET/SOS devices. II. Gamma-radiation-induced effects

This publication has 10 references indexed in Scilit:

• JFET/SOS devices. I. Transistor characteristics and modeling results
  IEEE Transactions on Electron Devices, 1988
• Radiation-hardened silicon-on-insulator complementary junction field-effect transistors
  IEEE Electron Device Letters, 1986
• High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing
  Applied Physics Letters, 1986
• Gamma-Induced Leakage in Junction Field-Effect Transistors
  IEEE Transactions on Nuclear Science, 1984
• Rapid Anneal of Radiation-Induced Silicon-Sapphire Interface Charge Trapping
  IEEE Transactions on Nuclear Science, 1978
• Leakage Current Phenomena in Irradiated SOS Devices
  IEEE Transactions on Nuclear Science, 1977
• Silicon-sapphire interface charge trapping - effects of sapphire type and EPI growth conditions
  IEEE Transactions on Nuclear Science, 1976
• Radiation induced charge trapping at the silicon sapphire substrate interface
  IEEE Transactions on Nuclear Science, 1974
• Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
  Journal of Applied Physics, 1974
• Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors
  IEEE Transactions on Nuclear Science, 1973