JFET/SOS devices. I. Transistor characteristics and modeling results
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 353-358
- https://doi.org/10.1109/16.2461
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- JFET/SOS devices. II. Gamma-radiation-induced effectsIEEE Transactions on Electron Devices, 1988
- Modeling of effect of interfacial charges on impurity diffusions in silicon-on-sapphire device processingIEEE Transactions on Electron Devices, 1986
- Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOSElectronics Letters, 1986
- Radiation-hardened silicon-on-insulator complementary junction field-effect transistorsIEEE Electron Device Letters, 1986
- Furnace and Rapid Thermal Annealing of P+/n Junctions in BF 2 + ‐ Implanted SiliconJournal of the Electrochemical Society, 1985
- Temperature dependence of Hall mobility and electrical conductivity in SIMOX filmsElectronics Letters, 1984
- Dopant profiling in silicon on sapphire using spreading resistanceApplied Physics Letters, 1984
- Suppressing Al outdiffusion in implantation amorphized and recrystallized silicon on sapphire filmsApplied Physics Letters, 1983
- Microsecond carrier lifetimes in Si films prepared on SiO2-coated Si substrates by zone-melting recrystallization and by subsequent epitaxial growthApplied Physics Letters, 1982
- Semiconductor devices suitable for use in cryogenic environmentsCryogenics, 1974