Microsecond carrier lifetimes in Si films prepared on SiO2-coated Si substrates by zone-melting recrystallization and by subsequent epitaxial growth
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 83-85
- https://doi.org/10.1063/1.93297
Abstract
The generation lifetimes in zone‐melting‐recrystallized Si films on SiO2‐coated Si substrates and in epitaxial Si layers grown by chemical vapor deposition on the recrystallized films have been determined by pulsed metal‐oxide‐semiconductor (MOS) capacitor and p‐n junction leakage current measurements. For recrystallized Si films that are 1×1017 cm−3 n type and 1×1016 cm−3 p type, respectively, the lifetimes are 0.2–0.5 μs and ∼1 μs. For epitaxial Si layers that are 2×1015 cm−3 n type, lifetimes are 0.8–1.3 μs, compared to ∼2 μs for control layers grown on single‐ crystal Si 〈100〉 wafers. The relatively high lifetimes suggest the possibility of fabricating bipolar devices utilizing Si‐on‐insulator structures prepared by the present techniques.Keywords
This publication has 8 references indexed in Scilit:
- Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallographyApplied Physics Letters, 1982
- n-channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2Applied Physics Letters, 1981
- Effects of grain boundaries on laser crystallized poly-Si MOSFET'sIEEE Electron Device Letters, 1981
- MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrateIEEE Electron Device Letters, 1981
- Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrateIEEE Electron Device Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Spatial dependence of the carrier lifetime in thin films of silicon on sapphireApplied Physics Letters, 1974
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971