High-gain lateral p-n-p bipolar action in a p-MOSFET structure
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (6) , 312-313
- https://doi.org/10.1109/55.145068
Abstract
Lateral p-n-p bipolar junction transistors (BJTs) fabricated using a bulk 0.25 mu m CMOS technology are presented. The devices are structurally the same as p-MOSFETs in which the gate and the n-well are internally connected to form the base. The p-n-p BJT has an adjustable current gain which can be higher than 1000 and its peak cutoff frequency is 3.7 GHz. Since the lateral p-n-p BJT is fully process compatible with submicrometer CMOS and/or BiCMOS technologies, extension to a BiCMOS and/or complementary BiCMOS process is readily achieved.<>Keywords
This publication has 3 references indexed in Scilit:
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