High-gain lateral bipolar action in a MOSFET structure
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2487-2496
- https://doi.org/10.1109/16.97413
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Lateral npn bipolar transistor for high current gain applications at reduced temperaturesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High gain lateral bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOSIEEE Journal of Solid-State Circuits, 1989
- Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperatureIEEE Transactions on Electron Devices, 1989
- Optimization of silicon bipolar transistors for high current gain at low temperaturesIEEE Transactions on Electron Devices, 1988
- Precision compressor gain controller in CMOS technologyIEEE Journal of Solid-State Circuits, 1987
- Design considerations for a high-performance 3-μm CMOS analog standard-cell libraryIEEE Journal of Solid-State Circuits, 1987
- Performance and hot-carrier effects of small CRYO-CMOS devicesIEEE Transactions on Electron Devices, 1987
- CMOS voltage references using lateral bipolar transistorsIEEE Journal of Solid-State Circuits, 1985
- The effect of base doping on the performance of Si bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1981