Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A cantilever shadow mask technique for reduced area molecular beam epitaxial growthApplied Physics Letters, 1991
- Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow maskApplied Physics Letters, 1990
- HgCdTe on GaAs/Si for mid-wavelength infrared focal plane arraysApplied Physics Letters, 1990
- Near-band-edge photoluminescence from chemically treated CdTe surfacesJournal of Applied Physics, 1990
- The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devicesProgress in Crystal Growth and Characterization, 1989
- A photoluminescence comparison of CdTe thin films grown by molecular-beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuumJournal of Applied Physics, 1988
- Low-temperature photoluminescence study of doped CdTe films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- MBE Growth Of CdTe And ZnCdTe On GaAs SubstratesPublished by SPIE-Intl Soc Optical Eng ,1986
- Luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxyJournal of Crystal Growth, 1985
- Study of acceptor states in CdTe by donor-acceptor pair excitation luminescenceJournal of Luminescence, 1980