Comments on the theory of photoionization of transition metal impurities in semiconductors
- 1 October 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 47 (2) , 443-449
- https://doi.org/10.1002/pssb.2220470209
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Optical properties of transition metal impurities in CdSe. I. Crystal‐field spectraPhysica Status Solidi (b), 1971
- Photo-ionization of deep impurities in semiconductorsJournal of Physics C: Solid State Physics, 1969
- Band parameters of semiconductors with zincblende, wurtzite, and germanium structureJournal of Physics and Chemistry of Solids, 1963
- Use of Fractional Parentage Coefficients in the Calculation of Photoelectric Cross SectionsProceedings of the Physical Society, 1959
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957