Single event gate rupture of power DMOS transistors
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Development of cosmic ray hardened power MOSFET'sIEEE Transactions on Nuclear Science, 1989
- Heavy-Ion-Induced, Gate-Rupture in Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- On Heavy Ion Induced Hard-Errors in Dielectric StructuresIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986