Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level

This publication has 48 references indexed in Scilit:

• Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
  Japanese Journal of Applied Physics, 1990
• Photoluminescence transients due to hole capture at DX centers in ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As:Si
  Physical Review Letters, 1989
• Magnetic studies of persistent photoconductivity inn-AlxGa1−xAs
  Physical Review Letters, 1989
• Direct-energy-gap dependence on Al concentration inAlxGa1−xAs
  Physical Review B, 1988
• Characterization of theDXcenter in the indirectAlxGa1−xAsalloy
  Physical Review B, 1988
• Photocapacitance study of pressure-induced deep donors in GaAs: Si
  Physical Review B, 1987
• Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
  Japanese Journal of Applied Physics, 1985
• Non‐Γ Deep Levels and the Conduction Band Structure of Ga_1−xAl_xAs Alloys
  Physica Status Solidi (b), 1981
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979
• GaAs lower conduction-band minima: Ordering and properties
  Physical Review B, 1976