Characterization of defects in semiconductors by deep level transient spectroscopy
- 1 November 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 106 (1) , 116-126
- https://doi.org/10.1016/0022-0248(90)90293-t
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Process-induced and gold acceptor defects in siliconPhysical Review B, 1987
- Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairsPhysical Review B, 1985
- Rapid Diffusion of Molybdenum Trace Contamination in SiliconMRS Proceedings, 1984
- Capacitance Transient Spectroscopy of Trace Contamination in SiliconJournal of the Electrochemical Society, 1982
- Dislocation energy levels in deformed siliconCrystal Research and Technology, 1981
- The impact of molybdenum on silicon and silicon solar cell performanceSolid-State Electronics, 1980
- Defect Formation during High Pressure, Low Temperature Steam Oxidation of SiliconJournal of the Electrochemical Society, 1978
- A quenched-in defect in boron-doped siliconJournal of Applied Physics, 1977
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974