Comparative pyrolysis studies of ethylarsines
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 32-36
- https://doi.org/10.1016/0022-0248(91)90431-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Investigations into the Thermal Decomposition of Triethylarsenic: The Influence of Reagent Chemistry on Epitaxial Growth PurityJournal of the Electrochemical Society, 1990
- Dimethylarsine: Pyrolysis mechanisms and use for OMVPE growthJournal of Electronic Materials, 1990
- Vapor deposition of high-purity GaAs epilayers using monoethylarsineApplied Physics Letters, 1990
- Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxyJournal of Applied Physics, 1989
- Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and DiethylarsineJournal of the Electrochemical Society, 1989
- Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1988
- In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3Journal of Crystal Growth, 1988
- Elucidation of the organometallic vapor phase epitaxial growth mechanism for InPApplied Physics Letters, 1987
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- Thermal decomposition of azoethaneThe Journal of Physical Chemistry, 1968