Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
- 25 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (8) , 1023-1025
- https://doi.org/10.1063/1.119715
Abstract
No abstract availableKeywords
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