Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 550-554
- https://doi.org/10.1016/0022-0248(93)90681-l
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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