Anomalous diffusion of fluorine in silicon
- 14 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (11) , 1310-1312
- https://doi.org/10.1063/1.107575
Abstract
The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out-diffusion behavior which is characterized by the depletion of F in Si substrate at temperatures ≥550 °C with complete suppression of diffusion deeper into the bulk of Si. F species which migrate to the surface react with native oxide and Si to form volatile Si oxyfluoride and Si fluoride, which then evaporate from the surface. There is clear evidence that the formation of Si oxyfluoride correlates strongly with the thermally activated anomalous migration of F. While the driving force for the anomalous F migration has not yet been identified, it appears that the electric field is not a dominant mechanism.Keywords
This publication has 10 references indexed in Scilit:
- Thermal behavior of fluorine in SiO2 and Si investigated by the 19F(p,αγ) 16O reaction and secondary-ion mass spectrometryJournal of Applied Physics, 1991
- Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanismsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3Applied Physics Letters, 1991
- Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphereJournal of Applied Physics, 1990
- Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary-ion mass spectrometry, and x-ray photoelectron spectroscopyApplied Physics Letters, 1990
- Fluorine-silicon reactions and the etching of crystalline siliconPhysical Review Letters, 1988
- Influence of doping on the etching of Si(111)Physical Review B, 1987
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted siliconJournal of Applied Physics, 1979
- Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted siliconApplied Physics Letters, 1978