Thermal behavior of fluorine in SiO2 and Si investigated by the 19F(p,αγ) 16O reaction and secondary-ion mass spectrometry

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Abstract
Thermal changes of implanted fluorine distributions in a SiO2 film and a (100)‐oriented Si single crystal were investigated by the 19F(p, αγ) 16O reaction and secondary‐ion mass spectrometry. Fluorine in the Si accumulates to a damaged region (consistent with a Monte Carlo simulation) after annealing above 700 °C for 30 min. This effect is not observed in the SiO2. Once the fluorine is trapped by the damaged region, nearly 80% of the fluorine stays in the silicon after annealing at 800 °C. In contrast, only 10% of implanted fluorine remains in the SiO2 after annealing at 800 °C. These effects are explained by assuming the difference in the natures of imperfections in these samples. Above 1000 °C, most of the fluorine diffuses out of both systems.