Correlation of atomic distribution and implantation induced damage profiles in be-ion implanted Si
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 47 (1-4) , 137-141
- https://doi.org/10.1080/00337578008209199
Abstract
Atomic depth profiles from Be-implanted Si have been examined as a function of implant fluence and annealing, and the results have been correlated with theoretically calculated implantation induced damage profiles. The Be atomic depth profiles were obtained by secondary ion mass spectrometry (SIMS) techniques from samples implanted at 300 keV to fluences ranging from 2 × 1012 to 1015 cm−2. Subsequent to annealing at 600°C for 30 min, the Be SIMS profiles exhibited anomalous redistribution effects. The Be profiles obtained from the annealed samples had the same general features as the depth distribution of implant energy deposited into damage, based on Brice's1 calculations. The correlation of the SIMS atomic profiles and the theoretical damage profiles indicated that Be “decorates” the implantation induced damage regions while redistributing during the annealing process.Keywords
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