Current induced degradation in GaAs HBT's

This publication has 9 references indexed in Scilit:

• Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• High reliability InGaP/GaAs HBT
  IEEE Electron Device Letters, 1998
• Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors
  Journal of Applied Physics, 1996
• Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
  Japanese Journal of Applied Physics, 1994
• Pulsed 1-watt heterojunction bipolar transistors at 35 GHz
  IEEE Microwave and Guided Wave Letters, 1993
• GaAs HBT's for microwave integrated circuits
  Proceedings of the IEEE, 1993
• Surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors
  Solid-State Electronics, 1992
• High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• Heterostructure bipolar transistors and integrated circuits
  Proceedings of the IEEE, 1982