MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34, 35-38
- https://doi.org/10.1109/iedm.2000.904253
Abstract
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated.Keywords
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