As redistribution during Ti silicide formation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 427-430
- https://doi.org/10.1016/s0168-583x(87)80084-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Effects of platinum silicide thickness and annealing temperature on arsenic redistributionJournal of Applied Physics, 1984
- Titanium silicide formation: Effect of oxygen distribution in the metal filmJournal of Applied Physics, 1984
- Arsenic out-diffusion during TiSi2 formationApplied Physics Letters, 1984
- Kinetics of TiSi2 formation by thin Ti films on SiJournal of Applied Physics, 1983
- Lateral growth of titanium silicide over a silicon dioxide layerJournal of Applied Physics, 1983
- Growth of titanium silicide on ion-implanted siliconJournal of Applied Physics, 1983