Effects of platinum silicide thickness and annealing temperature on arsenic redistribution
- 15 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (12) , 3418-3427
- https://doi.org/10.1063/1.333908
Abstract
Arsenic redistribution due to PtSi formation was studied with Auger sputter profiling. Pt was sputter-deposited onto As-doped Si wafers (1.7×1020 cm3) with Pt thicknesses of 200, 500, and 1000Å. Samples of each Pt thickness were annealed at 400 °C for 30 min in a forming gas ambient and another set of samples were annealed at 550 °C for 30 min in forming gas. In all cases, As appeared at the PtSi surface and at the PtSi-Si interface. More As was found at the surface for the higher temperature anneal and more As redistribution occurred overall for the thicker Pt films. The As redistribution is modeled by an initial pileup at the PtSi-Si interface followed by As outdiffusion to the PtSi surfaceThis publication has 23 references indexed in Scilit:
- Redistribution of As during Pd2Si formation: Ion channeling measurementsJournal of Applied Physics, 1982
- Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodesJournal of Applied Physics, 1982
- Low temperature doping of arsenic atoms in silicon during Pd2Si formationThin Solid Films, 1982
- Low-temperature redistribution of As in Si during Pd2Si formationApplied Physics Letters, 1981
- Ion-implanted low-barrier PtSi Schottky-barrier diodesIEEE Transactions on Electron Devices, 1980
- Ion beam modification of silicide-silicon interfacesRadiation Effects, 1980
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978
- Electrical Properties of Platinum-Silicon Contact Annealed in an H2AmbientJapanese Journal of Applied Physics, 1978
- Pt2Si and PtSi formation with high-purity Pt thin filmsApplied Physics Letters, 1977
- An analytical study of platinum silicide formationThin Solid Films, 1976