Structural properties and Raman modes of zinc blende InN epitaxial layers
- 18 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (3) , 362-364
- https://doi.org/10.1063/1.123072
Abstract
We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Γ of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN and c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found.Keywords
This publication has 19 references indexed in Scilit:
- Full-potential, linearized augmented plane wave programs for crystalline systemsPublished by Elsevier ,2002
- Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wellsSolid State Communications, 1998
- Group III nitride semiconductors for short wavelength light-emitting devicesReports on Progress in Physics, 1998
- Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substratesApplied Physics Letters, 1996
- Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InNPhysical Review B, 1996
- Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopySolid State Communications, 1995
- Consistent structural properties for AlN, GaN, and InNPhysical Review B, 1995
- Explicit treatment of the gallium 3delectrons in GaN using the plane-wave pseudopotential methodPhysical Review B, 1994
- Pressure dependence of the electronic properties of cubic III-V In compoundsPhysical Review B, 1990
- Second-order Raman scattering in InAsPhysical Review B, 1980