Growth orientation dependence of normal incidence absorption in ellipsoidal-valley quantum wells

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Abstract
We have investigated theoretically the dependence of normal incidence absorption from interconduction subband transitions on the growth direction in ellipsoidal‐valley quantum wells. Due to the effective‐mass anisotropy of electrons in the ellipsoidal valleys, normal incidence absorption is allowed in these structures when the growth direction is not collinear with the principal axes of the ellipsoidal valley which is associated with the ground state. We found that in the AlAs X‐valley system the absorption is near optimal for such low‐index orientated structures as [210] and [113] quantum wells, while in the Ga0.7Al0.3Sb L‐valley system the absorption reaches a maximum for the [110] growth direction.