X-ray topography and diode efficiency of vapour grown GaAs1−xPx layers
- 1 July 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 34 (2) , 181-188
- https://doi.org/10.1016/0022-0248(76)90128-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Kinetics of vapour-phase epitaxial growth of GaAs1−PJournal of Crystal Growth, 1972
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- Method for Producing Graded Composition Epitaxial Layers by Vapor DepositionJournal of the Electrochemical Society, 1971
- Dislocations in GaAs17−xPxJournal of Applied Physics, 1969
- Optimization of Electroluminescent Efficiencies for Vapor-Grown GaAs[sub 1−x]P[sub x] DiodesJournal of the Electrochemical Society, 1969
- Compositional Inhomogeneities in GaAs1−xPx Alloy Epitaxial LayersJournal of Applied Physics, 1968
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966