Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells
- 1 October 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7) , 658-660
- https://doi.org/10.1063/1.94474
Abstract
The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance‐voltage measurements on the same device. In the as‐grown device, the CuInSe2 is lightly doped n type. After baking to about 225 °C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.Keywords
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