Single-crystalline silicon lift-off films for metal–oxide–semiconductor devices on arbitrary substrates
- 24 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (4) , 558-560
- https://doi.org/10.1063/1.127043
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Failure resistance of amorphous silicon transistors under extreme in-plane strainApplied Physics Letters, 1999
- Mechanics of rollable and foldable film-on-foil electronicsApplied Physics Letters, 1999
- Critical Review: Adhesion in surface micromechanical structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- RF and 1/f noise investigations on MESFETs and circuits transplanted by epitaxial lift offIEEE Transactions on Electron Devices, 1996
- AlGaAs/GaAs Heterojunction Bipolar Transistors on Si substrate using epitaxial lift-offIEEE Electron Device Letters, 1995
- Epitaxial lift-off and its applicationsSemiconductor Science and Technology, 1993
- RF properties of epitaxial lift-off HEMT devicesIEEE Transactions on Electron Devices, 1993
- DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off techniqueElectronics Letters, 1990
- Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substratesApplied Physics Letters, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987