Band gap in Hg1-x ZnxTe solid solutions
- 1 January 1987
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 48 (2) , 247-251
- https://doi.org/10.1051/jphys:01987004802024700
Abstract
First experimental results on the band gap variations with temperature and composition of Hg1-xZnxTe solid solutions are given for the whole composition range. An empirical expression describing the results is givenKeywords
This publication has 7 references indexed in Scilit:
- Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrateApplied Physics Letters, 1985
- Mercury zinc telluride epilayers grown by LPEJournal of Crystal Growth, 1985
- Mechanism for dislocation density reduction in GaAs crystals by indium additionApplied Physics Letters, 1985
- THM, a breakthrough in Hg1−xCdxTe bulk metallurgyJournal of Vacuum Science & Technology A, 1985
- Mercury zinc telluride, a new narrow-gap semiconductorApplied Physics Letters, 1985
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution modelRevue de Physique Appliquée, 1973