Dislocation effect on the activation efficiency profile in Si-implanted and SiN-capped annealed GaAs

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Abstract
Depth profiles of carrier concentration and photoluminescence (PL) intensities are measured for Si-implanted and SiN-capped annealed GaAs. The peak carrier concentration decreases far from dislocations without a change in the effective thickness of the active layer. Moreover, the activation efficiency of the implanted Si decreases and the PL intensity of the Si on the arsenic site (SiAs) acceptor increases in the surface region of the active layer. These results suggest that the As vacancy concentration increases during the annealing process, and this enhances the effect of dislocations which creates an electrical nonuniformity of the Si-implanted GaAs layer.