Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas
- 25 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (8) , 458-460
- https://doi.org/10.1063/1.97115
Abstract
Cyclotron resonance of a two-dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.Keywords
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