Transient type-inversion of semi-insulating GaAs under strong illumination at 140 K detected by the nondestructive surface-acoustic-wave technique
- 31 July 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (7) , 705-711
- https://doi.org/10.1016/0038-1101(87)90108-0
Abstract
No abstract availableKeywords
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