Silicon oxide film preparation by RF plasma-enhanced MOCVD using hexamethyldisiloxane

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Abstract
Silicon oxide films were prepared in an RF capacitive plasma using hexamethyldisiloxane. The films deposited on c-Si, quartz plate, glass and polycarbonate at room temperature were studied by means of IR absorption, ESCA and optical transmission spectra. The processing plasmas were also monitored spectroscopically.