Ion and chemical radical effects on the step coverage of plasma enhanced chemical vapor deposition tetraethylorthosilicate films
- 15 February 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (4) , 2119-2126
- https://doi.org/10.1063/1.345546
Abstract
We have compared the step coverage of plasma enhanced chemical vapor deposition tetraethylorthosilicate films of microwave downstream, high frequency radio frequency (rf), and low frequency rf depositions. The microwave-downstream deposition, characterized by bimolecular surface reactions, produces a conformal step coverage. The rf depositions with ion-induced surface reactions produce a low sidewall, high bottom coverage. The chemical radical and the ion effects on the step coverage are discussed.This publication has 12 references indexed in Scilit:
- Silicon oxide deposition from tetraethoxysilane in a radio frequency downstream reactor: Mechanisms and step coverageJournal of Vacuum Science & Technology B, 1989
- Frequency effects and properties of plasma deposited fluorinated silicon nitrideJournal of Vacuum Science & Technology B, 1988
- LPCVD of Borophosphosilicate Glass from Organic ReactantsJournal of the Electrochemical Society, 1987
- Effects of frequency on optical emission, electrical, ion, and etching characteristics of a radio frequency chlorine plasmaJournal of Applied Physics, 1985
- Evaluation of the Phosphorus Concentration and Its Effect on Viscous Flow and Reflow in Phosphosilicate GlassJournal of the Electrochemical Society, 1985
- Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine dischargeJournal of Vacuum Science and Technology, 1982
- Low Pressure Deposition of Phosphosilicate Glass FilmsJournal of the Electrochemical Society, 1982
- The Deposition of Silicon Dioxide Films at Reduced PressureJournal of the Electrochemical Society, 1979
- Investigation of SiO2 layers deposited by plasma decomposition of tetra-ethoxy silane in a planar reactorPhysica Status Solidi (a), 1978
- The deposition of thin films by the decomposition of tetra-ethoxy silane in a radio frequency glow dischargeThin Solid Films, 1972